title
  • image of Single FETs, MOSFETs>IMBG65R015M2HXTMA1
  • image of Single FETs, MOSFETs>IMBG65R015M2HXTMA1
  • Part number IMBG65R015M2HXTMA1
    Product classification Single FETs, MOSFETs
    description SILICON CARBIDE MOSFET
    encapsulation Tape & Reel (TR)
    quantity 200
    price $14.3800
    RoHS status YES
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrIR (Infineon Technologies)
    SeriesCoolSiC™ Gen 2
    PackageTape & Reel (TR)
    Product StatusACTIVE
    Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 175°C (TJ)
    TechnologySiCFET (Silicon Carbide)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C115A (Tc)
    Rds On (Max) @ Id, Vgs18mOhm @ 64.2A, 18V
    Power Dissipation (Max)416W (Tc)
    Vgs(th) (Max) @ Id5.6V @ 13mA
    Supplier Device PackagePG-TO263-7-12
    Drive Voltage (Max Rds On, Min Rds On)15V, 20V
    Vgs (Max)+23V, -7V
    Drain to Source Voltage (Vdss)650 V
    Gate Charge (Qg) (Max) @ Vgs79 nC @ 18 V
    Input Capacitance (Ciss) (Max) @ Vds2792 pF @ 400 V