specifications
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| TYPE | DESCRIPTION |
| Mfr | Alpha and Omega Semiconductor, Inc. |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 10A, 15V |
| Power Dissipation (Max) | 187.5W (Ta) |
| Vgs(th) (Max) @ Id | 3.5V @ 10mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +15V, -5V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 58.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1762 pF @ 400 V |