title
  • image of Bipolar RF Transistors>2SC2839E-SPA-AC
  • image of Bipolar RF Transistors>2SC2839E-SPA-AC
  • Part number 2SC2839E-SPA-AC
    Product classification Bipolar RF Transistors
    description NPN EPITAXIAL PLANAR SILICON
    encapsulation Bulk
    quantity 11900
    price $0.0500
    RoHS status NO
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrSanyo Semiconductor/onsemi
    Series-
    PackageBulk
    Product StatusACTIVE
    Package / Case3-SIP
    Mounting TypeThrough Hole
    Transistor TypeNPN
    Gain25dB
    Power - Max150mW
    Current - Collector (Ic) (Max)30mA
    Voltage - Collector Emitter Breakdown (Max)20V
    DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 1mA, 6V
    Frequency - Transition320MHz
    Noise Figure (dB Typ @ f)3dB @ 100MHz
    Supplier Device Package3-SPA