title
  • image of Bipolar RF Transistors>2N3495
  • image of Bipolar RF Transistors>2N3495
  • Part number 2N3495
    Product classification Bipolar RF Transistors
    description SMALL-SIGNAL BJT
    encapsulation Bulk
    quantity 200
    price $29.2000
    RoHS status NO
    specifications
    TYPEDESCRIPTION
    MfrRoving Networks (Microchip Technology)
    Series-
    PackageBulk
    Product StatusACTIVE
    Package / CaseTO-205AA, TO-5-3 Metal Can
    Mounting TypeThrough Hole
    Transistor TypePNP
    Operating Temperature-65°C ~ 200°C (TJ)
    Power - Max400mW
    Current - Collector (Ic) (Max)100mA
    Voltage - Collector Emitter Breakdown (Max)120V
    DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 50mA, 10V
    Frequency - Transition150MHz
    Supplier Device PackageTO-5AA